Senior R&D Engineer – MOCVD/Epitaxy/GaN
microTECH Global
- Cambridge
- £50,000-65,000 per year
- Permanent
- Full-time
- Develop advanced MOVPE process for novel porous GaN structures to support R&D projects and product development for major global customers
- Work with new and existing suppliers and contractors to deliver required epitaxial wafers into various technology projects according to the work schedule and specs
- Document and implement R&D practices, approaches and policies
- Contribute to the development of in-house characterisation capabilities to minimize the learning cycle time
- Support production by analysing the connection between epi process and the device data to improve yield and performance
- PhD or Master degree in Electrical Engineering, Physics, Materials Engineering or related field or equivalent experience with good background knowledge on GaN materials and LED devices.
- Hands on experience in GaN-on-Si epitaxy
- MOCVD process development with a proven track record
- Strong understanding of the dependence of LED device performance on epitaxy process and design
- Good understanding of GaN materials and device characterisation techniques, such as XRD, PL, AFM, SEM, TEM, EL etc.